A Device for Sublimation Molecular-Beam
Deposition of Silicon Films

V. G. Shengurov* and D. V. Shengurov**

*Physicotechnical Research Institute of Nizhni Novgorod State University,
pr. Gagarina 23, korp. 3, Nizhni Novgorod, 603600 Russia

**Institute for the Physics of Microstructures, Russian Academy of Sciences,
Kazanskoe sh. GSP-105, Nizhni Novgorod, 603600 Russia

Received June 16, 2000

Abstract—A device for sublimation molecular-beam deposition of P-doped silicon films on standard silicon
wafers with diameters of up to 76 mm is described. Uniform deposition was performed through asymmetric
arrangement of the sublimation source relative to the wafer, which was rotated about its axis.

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