A Technological Test of the Mir-Station Orbital Flight Modes
for Semiconductor Single Crystal Growth

A. V. Kartavykh, E. S. Kopeliovich, M. G. Mil’vidskii, and V. V. Rakov

Institute of Chemical Problems for Microelectronics, Bol’shoi Tolmachevskii per. 5, Moscow, 109017 Russia

e-mail: L22-ihpm@mail.girmet.ru

Received June 13, 2000

Abstract—By using a method for testing the microgravity conditions aboard the orbital station (OS) pro-
posed by the authors, different effects of the main OS orbital modes on crucibleless melting and heat-transfer
processes in Ge melts were revealed. Even a minimal actually attainable level of onboard variable low-fre-
quency accelerations (4 10^–6–2.5 10^–5)g₀ is insufficient for eliminating nonstationary forced convection
in the melt. The necessity of utilizing vibration-isolation mounts for crystal-growth equipment disposition
on board the OS was confirmed.

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