Contribution from the Solid-Phase Interactions of Activating
Oxides to Their Nonlinear Joint Effect
on the Thermal Oxidation of GaAs

I. Ya. Mittova, V. F. Kostryukov, V. R. Pshestanchik, I. A. Donkareva, and B. L. Agapov

Voronezh State University, Universitetskaya pl. 1, Voronezh, 394893 Russia

Received April 10, 2007

Abstract—The contribution from the solid-phase interactions in the PbO + Sb₂O₃ and PbO + Bi₂O₃ activating
compositions to the multichannel process of GaAs thermal oxidation has been determined by spatial separation
of the oxides. The solid-phase interactions make a positive contribution to the overall negative nonlinear effect
in the dependence of the oxide film thickness on the GaAs surface on the activator batch composition. The con-
tributions from the oxide interactions on the semiconductor surface and in the gas phase have been evaluated
for the PbO + Sb₂O₃ composition.

DOI: 10.1134/S0036023608070085

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