Polythermal Section GeSnAs of the SnAsGe System

G. V. Semenova, E. Yu. Kononova, and T. P. Sushkova

Voronezh State University, Universitetskaya pl. 1, Voronezh, 394006 Russia

e-mail: semen157@chem.vsu.ru

Received April 14, 2014

Abstract—The T–x diagram of the polythermal section Ge–SnAs of the Sn–As–Ge system was constructed
using the results of X-ray powder diffraction and differential thermal analyses. It was found that the Ge–SnAs
section is not quasi-binary. In the ternary system, two four-phase peritectic transformations occur: L + GeAs
Sn₄As₃ + Ge at 821 K and SnAs Sn₄As₃ + GeAs at 834 K.

DOI: 10.1134/S0036023614120225

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