Modeling of the Diffraction Pattern
of 1D-Disordered Silicon Carbide

V. A. Popenko

Research Industrial Association Luch, Podol’sk, Moscow oblast, 142100 Russia

e-mail: pvapds@mail.ru

Received August 30, 2007

Abstract—A method for calculating the diffraction pattern of a 1D-disordered crystal structure is considered
by the example of silicon carbide. One-dimensional disordering is described using a cell setting the mutual
position of all close-packed crystal layers. Two models of structure disordering during the polytypic transfor-
mation of the silicon carbide cubic modification into hexagonal are discussed. The results of the calculation of
the diffraction spectrum in different stages of polytypic transformation are reported. It is shown that 1D disor-
dering leads to the formation of a set of weak diffraction reflections. The experimentally observed changes in
the diffraction pattern can be interpreted within the hypothesis on crystal structure disordering through dis-
placement of adjacent close-packed layers.

PACS numbers: 61.72.Bb, 61.72.Nn

DOI: 10.1134/S1063774508050131

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