Study of Structural Characteristics of Ferromagnetic Silicon
Implanted with Manganese

A. F. Orlov^a, Yu. A. Agafonov^b, L. A. Balagurov^a, V. T. Bublik^c, V. I. Zinenko^b,
N. S. Perov^d, V. V. Sarakin^e, and K. D. Shcherbachev^c

^a State Institute of Rare Metals, Bol’sho Tolmachevski per. 5, Moscow, 119017 Russia
e-mail: rmdp@girmet.ru

^b Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, ul. Institutskaya 6,
Chernogolovka, Moscow oblast, 142432 Russia

^c Moscow State Institute of Steel and Alloys, Leninski pr. 4, Moscow, 119049 Russia

^d Moscow State University, Moscow, 119992 Russia

^e State Research Institute of Physical Problems, Zelenograd, Moscow, Russia

Received August 14, 2007

Abstract—The structure of manganese-implanted (dose 210¹⁶ cm²) n-type and p-type silicon, ferromag-
netic at room temperature, has been studied. During implantation, an amorphized layer is formed in the silicon
wafer. Subsequent vacuum annealing improves the structural quality of the implanted material and leads to the
formation of a vacancy solid solution of manganese in silicon. A difference in the degree of structural quality
of silicon implanted by different impurities has been experimentally established.

PACS numbers: 61.72.Dd, 71.20.Mq, 72.80.Cw

DOI: 10.1134/S106377450805012X

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