X-Ray Diffraction Study of the Morphology
and Structure of Pulse-Anodized Porous Si Multilayers

A. A. Lomov^a, V. A. Karavanski^b, A. L. Vasil’ev^a, and D. V. Novikov^c

^a Shubnikov Institute of Crystallography, Russian Academy of Sciences, Leninski pr. 59, Moscow, 119333 Russia

e-mail: a.lomov@ns.crys.ras.ru

^b General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991 Russia

^c Deutsches Electronen Synchrotron DESY, Notkestr. 85, D-22607, Hamburg, Germany

Received December 21, 2007

Abstract—Porous Si layers, obtained by pulsed electrochemical etching of n-Si(001) substrates (resistivity
0.01 cm) in a 1 : 1 mixture of hydrofluoric acid and ethanol, have been investigated by high-resolution X-ray
diffraction and electron microscopy. The average structural parameters of the layers grown (thickness, strain,
porosity, pore size) are determined. It is found that pulsed anodic oxidation leads to a decrease in the average
strain of layers. It is established that, at frequencies up to 1 Hz, anodic oxidation makes obtaining porous silicon
multilayers with layer thicknesses of 20–300 nm containing Si nanocrystallites possible. It is shown that X-ray
diffuse scattering from pores yields information about their ordering and can be used to monitor the processes
of electrochemical etching used to form porous layers.

PACS numbers: 61.10.Nz, 61.10.-i

DOI: 10.1134/S1063774508050039

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