Transport Properties of Y₃Fe₅O₁₂ Garnet Crystals

I. D. Lomako*, V. I. Pavlov**, and N. Ya. Shishkin***

* Institute of Solid-State and Semiconductor Physics, National Academy of Sciences of Belarus,
ul. Brovki 17, Minsk, 220072 Belarus

e-mail: Lomako@iftt.bas-net.by

** Belarussian State Technological University, ul. Sverdlova 13a, Minsk, 220050 Belarus

*** Belarussian State Pedagogical University, ul. Sovetskaya 18, Minsk, 220809 Belarus

Received March 28, 2002

Abstract—The temperature dependence of electrical resistivity and thermopower is studied for a series of
Y₃Fe₅O₁₂ (YIG) garnet single crystals with different levels of optical and structural quality. The effect of some
technology-related impurities on the value of is discussed. It is shown for the first time that the experimental
data on the absorption coefficient and electrical resistivity can be interpreted based on a single physical param-
eter, namely, the intensity ratio of coherent and incoherent X-ray scattering (K/nk). This ratio characterizes the
fraction of conduction electrons in a given sample. The results are discussed with due regard for the nonequiv-
alence of the planes of the {110} and {111} types. The additional details of the charge-transfer mechanism are
established for the (111)-oriented YIG samples. It is suggested that the values could be characterized in terms
of nk or nk/K. © 2003 MAIK “Nauka/Interperiodica”.

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