Noise Diode as a Basis for Creation of Temperature Alarm

Abstract— Currently, noise diodes are widely used to create noise generators. The breakdown voltage of the p–n junction of noise diodes depends on temperature. However, the existing results do not indicate that such a dependence can be used to measure temperature. Therefore, the purpose of this work is to establish the possibility of using noise diodes in temperature measurements as well as the use of these diodes for creation of temperature alarms. ND102L, ND103L, and ND104L silicon noise diodes produced by TsVETOTRON JSC (Republic of Belarus) serve as objects under study. It is found that the dependence of the electric current of noise diode on temperature at a constant reverse bias voltage exceeding the breakdown voltage of the p–n junction of the noise diode has a linear fragment. The size of such a linear fragment depends on the reverse bias voltage exceeding the breakdown voltage of the p–n junction of the noise diode. It is shown that, at reverse bias voltages exceeding the breakdown voltage of the p–n junction for a temperature of 318 K, the linear fragment of the dependences of I on T corresponds to the entire temperature range under study. This method can be used as a basis for operation of a temperature alarm based on a noise diode.